eMCP (LP-DDR3)
一种集成eMMC和LPDDR3的内嵌式闪存存储器，具有独创的ECC、CRC、断电保护、固件备份、均衡磨损等特性，有利于手机的设计及内部空间的优化，其集成度更高、实现了小体积内的一体化，是中高
- 上一篇：eMMC
- 下一篇：eMCP (LP-DDR2)
◇ 产品规格：11.5*13*1.0
◇ 产品容量：8+8、 16+8、 16+16、 32+16
◇ 产品系列：
| Part Number | Density | Bus Width | Voltage | Package | PinCount | Package Size | Version |
| GPBD81S42MFLB-T3E | 8GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.2 | V1.40 |
| GPBD82S44MFLB-T3E | 16GB+16Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.2 | V1.40 |
| GPBE81S42MFLB-T3E | 8GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBNA1S62MFL0-T3K | 16GB+12Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBU81S42MFL0-T3H | 8GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBU81S61MFL0-T3K | 8GB+6Gb | X32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBG81S42MFL0-T3E | 8GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBU81S81MFL0-T3M | 8GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBNA1S82MFL0-T3M | 16GB+16Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBNA1S81MFL0-T3M | 16GB+8Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
| GPBNA2S82MFL0-T3M | 32GB+16Gb | x32 | 1.8V | TFBGA | 221-Ball | 11.5*13*1.0 | V1.40 |
◇ 商品名称：Em
◇ 商品类别：嵌入式存储
◇ 封装规格：FBGA
◇ 商品编号：L20171225345